Si-Containing Positive Resist for ArF Excimer Laser Lithography

Abstract

A new chemically amplified Si-containing positive resist designed for ArF excimer laser lithography is described. TMSMMA-OCMA resist (Poly (trimethylsilyl methylmethacrylate-3-oxocyclohexylmethacrylate) with TPS SbF₆) worked as a positive resist when exposed by ArF excimer laser and it resolved 0.19μm Line and Space (L/S) pattern.