Materials Design Considerations for Future Lithographic Technologies

抄録

Progress in VLSI device design and manufacture continues to demand increasingly smaller and more precise device features. While today, almost all commercial devices are made by i- and g-line (365-436nm) photolithography, new lithographic strategies will be required within the next 5-8 years. Concomitant with the development of new lithographic techniques is the development of new resist materials. This paper presents a view of the varied chemistries that are available for the design of resist materials. Particular emphasis is placed on the novel chemistry and processing techniques, such as chemically amplified mechanisms and gas-phase functionalization processes, that have been developed in recent years.