Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Materials Design Considerations for Future Lithographic Technologies
E. ReichmanisO. NalamasuA. E. Novembre
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ジャーナル フリー

1995 年 8 巻 4 号 p. 709-728

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Progress in VLSI device design and manufacture continues to demand increasingly smaller and more precise device features. While today, almost all commercial devices are made by i- and g-line (365-436nm) photolithography, new lithographic strategies will be required within the next 5-8 years. Concomitant with the development of new lithographic techniques is the development of new resist materials. This paper presents a view of the varied chemistries that are available for the design of resist materials. Particular emphasis is placed on the novel chemistry and processing techniques, such as chemically amplified mechanisms and gas-phase functionalization processes, that have been developed in recent years.

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© The Technical Association of Photopolymers, Japan
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