The Polishing Performance of Copper CMP Slurries Containing Organic Particles as Abrasives

Abstract

The copper damascene technique with chemical mechanical planarization (CMP) is the most suitable approach to achieve high–performance multi–level interconnects using low–k materials. The primary objective of the Cu–CMP process is to reduce the defects such as dishing, scratching and erosion, which are partially due to hard inorganic abrasives or low selectivity of copper to barrier metals and dielectric materials. Recently, we have developed novel Cu–CMP slurries based on pure organic particles acting as abrasives to improve those defects using functional polymer resin technology. These soft polymer abrasives have reactive layers to copper on the surface and they work effectively when the abrasives are deformed. As a result, we have achieved high planarization and low defects.