2005 JSPE Autumn Meeting
Session ID : G09
Conference information
Host: The Japan Society for Precision Engineering
Characteristics of SiC surface processed by Plasma CVM (Chemical Vaporization Machining)
*Masayo Watanabe, Yasuhisa Sano, Kazuya Yamamura, Kazuto Yamauchi, tsuyoshi Ishida, kenta Arima, Katsuyoshi Endo, Yuzo Mori
Author information
Keywords:
silicon carbide,
Plasma Chemical Vaporization Machining,
plasma etching,
CF4,
Low Energy Electron Diffraction,
X–ray Photoelectron Spectroscopy
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