EB exposure characteristices of SOG with various EB dose

Abstract

Spin-On-Glass (SOG) and polymethylmethacrylate (PMMA) are used as a positive type electron beam (EB) resist whose depth is controlled by changing the EB acceleration voltage and EB dose. After the EB exposure, SOG was developed by buffered hydrofluoric acid (BHF) and PMMA was developed by mixed solution of isoamyl acetate and acetic ether. After the development, various etched depths were obtain by dose changing method, thus, 3-dimensional patterning of resist surface are possible using EB dose changing method.