Microfabrication by Ion Beam Irradiation and Wet Chemical Etching

Abstract

This study is intended to fabricate a deep nanostructure on single crystal silicon by the combination of ion beam irradiation and wet chemical etching. The area irradiated by ion beams can be selectively etched in HF solution. The ion irradiation facility, which can produce and irradiate highly charged ion beams, is employed. The etching characteristics of irradiated area are investigated to control the depth of irradiated area using high-energy ion beams. Hereby, it can be known that nanostructures with several hundreds nanometers deep can be fabricated, and it can be controlled by adjusting the accelerate voltage. In addition, the solubility of irradiated area is quite a different according to the irradiating conditions. These results indicate a possibility of this method as a novel deep nanofabrication process.