Abstract
Probing at the time of LSI test is becoming difficult by the miniaturization of electrodes as LSI devices become more high-density. In conventional probing, electric contact has been achieved by breaking of aluminum oxide on the electrodes by mechanical force. This large force about 100 mN gave the damage to the device and the probe, and has caused the problem of restricting miniaturization of a probe card. In this research, a new method of contact using removable bumps on device electrodes will be proposed. In this report, a fundamental characteristic measurement of contact using the existing conductive resin material will be presented.
