Abstract
We simulated stress in inter-metal dielectrics at tungsten CMP process by finite element method analysis. We found that the stress in inter-metal dielectrics after releasing of residual stress of tungsten film was about 100 times larger than the stress to act by CMP. Consequently, it was very likely that the releasing of residual stress of tungsten film by CMP causes the failure of inter-metal dielectrics being observed after CMP. Therefore, reducing defect in inter-metal dielectrics and decreasing residual stress of tungsten film are important for preventing failure of inter-metal dielectrics.
