Proceedings of JSPE Semestrial Meeting
2011 JSPE Autumn Conference
Session ID : M16
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Host: The Japan Society for Precision Engineering

Development of plasma assisted polishing (4th report)
Mechanism for flattening of reaction sintered SiC by plasma assisted polishing
*Hui Deng, Shinya Makiyama, Kazuya Yamamura
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Keywords: atmospheric pressure plasma, silicon carbide, polishing, surface modification, oxidation
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[in Japanese]
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© 2011 The Japan Society for Precision Engineering
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