Abstract
In CMP, its characteristics are affected by the various mechanical and chemical factors. It is well known that the removal rate decreases with the increase of the polishing time. Therefore, many papers have described the relationship between the removal rate and the pad surface asperity. On the other hand, the vibration phenomena in the polishing apparatus are important information for estimating the polishing characteristics. This paper aims to demonstrate the effect of the vibration phenomena on the removal rate in Si-CMP. As a result, the following points were observed. (1) The vibration acceleration increases with the increase of the polishing time. (2) The pad deteriorates by the progress in the polishing so that the number of contact points decreases and the spacing of contact points increases. (3) The removal rate decreases with increase of the vibration acceleration.