Proceedings of JSPE Semestrial Meeting
2013 JSPE Spring Conference
Session ID : K04
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Surface Modification of Silicon Carbide Films by Silicon Elimination Process
*Tatsuya NishioYuko AonoAtsushi Hirata
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Abstract
This study focuses on the surface modification of SiC films by heat treatment using induction heating and laser irradiation. As the result of structural analysis, D band and G band appeared in Raman spectra of heat-treated SiC films, which did not appear in that of untreated SiC films, thus carbon layers were formed by heat treatment. The result of the nanoindentation hardness test indicated that the hardness of carbon layers was about 1.5 times as high as that of untreated SiC films. As the result of the friction test, the friction coefficient of heat-treated SiC films was lower than that of untreated SiC films, which indicated that carbon layers had self-lubrication and decreased the friction.
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© 2013 The Japan Society for Precision Engineering
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