Low temperature and High-Rate Deposition of Si and SiOx Films with Characterization of Bottom-Gate Thin Film Transistors Using Atmospheric-Pressure Very High-Frequency Plasma

Abstract

Low-temperatureamorphous silicon (a-Si) and microcrystalline silicon (c-Si) are promising materials for use in large-area electronic devices. In this study, we have been developing a low-temperature and high-rate Si deposition technology using very high-frequency (VHF) plasma excited under atmospheric pressure (AP). In this presentation, we discuss the influences of plasma parameters, such as input VHF power density, H2/SiH4ratio and gas residence time in the plasma, on the crystallinity and property of the deposited Sifilms. In addition, the characteristics of bottom-gate thin film transistors (TFTs), the channel layers of which were prepared using AP-VHF plasma, will be presented.