Abstract
The purpose of this study is to synthesize the diamond to various substrates using an in-liquid plasma chemical vapor deposition (CVD) method. We chose the copper and diamond substrate to form a film. Diamond films were evaluated using a Raman spectroscopy and a Scanning Electron Microscope (SEM), respectively. As a result, it was possible to synthesize a polycrystalline diamond thin film on copper substrate. However, film delamination has occurred after the experiment by internal stress. The film delamination is caused by the thermal stress due to the different linear expansion coefficient between the Cu substrate and the diamond film. In epitaxial growth on the diamond single crystal substrate, the best orientation for epitaxial growth is found to be (100). Diamond film grown on diamond (100) substrate was smooth in surface roughness. It is also found that diamond polycrystalline film with irregularity is synthesized when the film is synthesized on diamond (111) substrate. The deposition rate is about 32 micrometers per hour when both single-crystal and polycrystalline diamond films are synthesized.
