Formation of graphene with reduced pit density assisted by plasma oxidation at room temperature

Analysis of by-products on SiC surface after plasma oxidation

Abstract

It is generally known that a high density of pits is formed on a SiC surface during graphene growth. In contrast, we have found that the pit density of a SiC surface can be reduced by surface treatments including plasma oxidation at room temperature prior to the graphene growth. In this study, we analyze by-products on a SiC surface after the plasma process by infrared/Raman spectroscopy and X-ray photoelectron spectroscopy. And we unveil the relationship between the surface condition of SiC after the process and the quality of graphene on it.