低温反応接合プロセスにおける接合材の適正厚みの選定と接合品質の信頼性の検討
微細電子材料の接合現象とプロセス制御に関する研究(第4報)
1993 年 11 巻 2 号 p. 347-352
詳細
1993 年 11 巻 2 号 p. 347-352
New microsoldering process has been researched and developed by inserteing Sn/In and Sn plating layers at the bonding interface preliminary without both additional solder and flux.
This paper clarified In roles is improvement of bonding strength and ductility of Sn-In diffusion reaction layers at the bonds.
The bondability is improved as supply of In plating layers of thickness of 1 to 3μm on the Sn plated Cu alloy lead of thickness of 2 to 10μm, and also it makes possible bonding such as low heating temperature which is tip temperature of 500 to 650 K.
Furthermore, this paper showed experimentally to the optimal thickness of plating layers and the possibility of fine pitch, multi-lead mounting in bonding process.
The good reliability of the bond is clarified by both high temperature storage and whisker test.
