抄録
It has been said that formation-process of bonded area in the solid state bonding is attained by two or more distinguishable mechanisms (plastic deformation, creep flow, interface-diffusion and volumediffusion). In the present paper, the diagrams of bonding mechanisms for copper are drawn, using three axes of bonding pressure P, bonding temperature T and percent bonded area S for the purpose of classifying the bonding processes. The diagrams allow the bonding process to be visualized by identifying the dominant mechanisms, resulting in the solid state bonding systematically divided into two processes of deformation and diffusion in terms of the dominant mechanisms. Also, the mechanism maps with contour curves are useful in planning the bonding process.
