クロムメタライズ法によるSiCセラミックスと金属との銀ろう付(第2報)
1988 年 6 巻 2 号 p. 233-238
詳細
1988 年 6 巻 2 号 p. 233-238
In the previous report, development of Cr metallization process has been described. Silver brazing process of SiC ceramics was conducted at 1073K by using this process. Bond strength and Helium leak rate of the bonded layer was evaluated.
In the present report, the reaction products in Cr metallized layer were investigated, and the mechanism of Cr metallization was clarified.
The results of this study are as follows,
(1) The reaction products of the Cr metallized layer were identified from the SiC side as three-layer compounds of a complex compound (Cr·Si·C), Cr silicide (Cr3Si, CrSi2) and Cr carbide (Cr7C3, Cr3C2).
(2) The form of these reaction products was rectangle crystals, and the crystals were piled up like brick blocks. The grain sizes were from 1 to 1.5μm.
(3) Activiation energy (Q) of the growth of Cr metallized layer was 102.9 kJ/mol. This is almost equal to the activiation energy of diffusion of C and Si into Cr. Therefore, the growth rate of Cr metallized layer is considered to be determined by diffusion of C and Si into Cr.
