3d金属とシリカの密着界面における化学結合状態のオージェ分析

金属-セラミックス界面近傍における化学結合状態の変遷(第二報)

抄録

The valence electronic structure of the Ti/SiO₂ interface was discussed by analyzing their Auger spectra. The change in the intensity ratio of SiO₂-L₂₃V₁D+Si-L₃M₂₃M₂₃/SiO₂-L₂₃V₁V₁ with Ti contents were helpfull to confirm the interfacial Ti-Si bonds under the condition that the electronic dose were kept constant at each analyze-point through the interface. This concept was also applied to annealed interface of Cr/SiO₂ and Cu/SiO₂. M-O or Si-O bonds were detected at the interface. The possibility of the existence of M-Si bonds were suggested from the Auger intensity ratio. The transition elements which exhibit small number of 3d electron, such as III a-VI a metals, tend to lose the metallic property in electronic structure.