RFプラズマCVD法により作製したDLC薄膜の熱電性能評価

抄録

This paper presents an investigation of the thermoelectric performance of DLC films deposited on glass substrates using RF plasma CVD method. The respective thermoelectric performances of Si-doped DLC film and non-Si doped DLC film were evaluated and compared. The DLC films showed a Seebeck effect, and they had p-type semiconductor characteristics.The values of DLC films’ Seebeck coefficients were 1/5 - 1/100 compared to those of the conventional thermoelectric materials. At temperatures of 80-200°C, the Seebeck coefficients of Si-doped DLC and non-doped DLC were almost identical. The resistivity value of DLC films decreased exponentially with increasing temperature. Furthermore, the DLC film values were much larger than those of conventional thermoelectric materials: 10⁵ to 10¹⁰ times larger. The thermal conductivity of DLC films was about one-half that of conventional thermoelectric materials at room temperature. The results presented above suggest that reducing DLC film resistivity through control of deposition conditions, doped element composition, and other means must be examined to raise the thermoelectric performance of DLC film.