Fast Infilling of TSV with Dispersion of Conductive Polymer/Metal Composite

Abstract

To shorten the production time of a through silicon via (TSV) in three-dimensional (3D) large scale integrated circuit (LSI), an in-filling technique of conductive materials was developed using a dispersion solution. The solution, containing a composite of conducting polymer (polypyrrole) and metal silver, was put into vertical holes of the silicon wafer within one minute and then solidified to form the composite.