表面技術
Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869
研究論文
バンドギャップ制御Zn-Ce-O膜の電気化学的形成
西山 健太朗朝川 隆信笹野 順司伊﨑 昌伸藤波 知之
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ジャーナル フリー

2015 年 66 巻 7 号 p. 320-324

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Zn-Ce-O films were prepared on an electrodeposited Ag layer in an aqueous solution containing a zinc nitrate hydrate and cerium nitrate hydrate. Their structural and optical characteristics were investigated using X-ray diffraction analysis, scanning electron microscopy, and reflectance measurements. The Ce content in the films changed from 0 to 43 mol% depending on the Ce concentration in the solutions. The ZnCe-O films were identified as a wurtzite ZnO containing Ce(Ce:ZnO) at 5% Ce and a mixture of Ce:ZnO and CeO2 containing Zn(Zn:CeO2) at 20-43% Ce. Zn-Ce-O films showed reflectance of greater than 60% in the visible light region. Its bandgap energy changed from 3.4 eV to 2.9 eV depending on the Ce content.
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