セミアディティブプロセスによる平滑ガラス基板上への回路形成

抄録

Circuit formation by a semi-additive process of copper films on glass was investigated. Copper films were produced on a glass substrate by direct electroless copper plating on a 20-30-nm-thick copper inclusive titanium oxide catalytic adhesion layer formed earlier on the glass substrate surface using a sol-gel method. After seed layer deposition, galvanic deposition thickened the copper film to 10 μm. Formation of L / S ＝ 50/50 μm to 200/200 μm copper circuit patterns on the glass substrate was then demonstrated, where adhesion was maintained throughout the process. The copper-inclusive titanium oxide adhesion layer was removed completely from the glass substrate surface without notably altering the glass surface morphology using a sodium hydroxide 100 g / L, trisodium citrate 5 g / L solution etching solution. Furthermore, in post electroless Ni-P plating, extraneous deposition was prevented by complete removal of the titanium oxide adhesion layer.