モード変換型マイクロ波プラズマCVDによるBドープダイヤモンド合成における発光スペクトルとB含有量の関係

抄録

As described herein, we investigate the effects of the plasma state on boron（B）-doped diamond（BDD）resistivity. Preparing BDD of various volume resistivities is difficult. Various studies have examined control of the BDD resistance value, necessitating systematic investigations of the relation between resistivity and B contents in plasma. Therefore, plasma during growth was measured using optical emission spectroscopy （OES）to clarify the relation between emission species and resistance values. For each condition, OES revealed peaks of B（249.7 nm）, BH （433.1 nm）, BO（436.3 nm）, H_α, H_β, CH, and C₂. Electrical resistivity measurements obtained using the four-point probe method with mini mum volume resistivity of 0.3 Ω·cm were obtained. With increasing B-containing emission species such as B, BH, and BO intensity in OES spectra, resistivity was decreased. Results suggest that B-containing emission species in OES spectra influence the resistivity of BDD.