In vacuum evaporation of metals, the temperature rise on the substrate surface due to the heat of evaporation is of importance, especially for the materials that are subject to low temperature thermal deformation and also frozen substrates. The present experiment concerns the reflection and absorption of radiation by the evaporated thin films, their influences on the surface temperature rise and differences in the temperature rise of the substrates due to the kinds of evaporated materials, evaporation rates etc. Characteristics of the heat of evaporation and basic conditions for reducing the temperature rise caused by the heat of evaporation are discussed. The results indicate that the absorption and reflection of radiation by the evaporated thin films, different from those by block materials, vary to a great extent with the film thicknesses. For the film thicknesses more than 700Å, inherent values depending on the kinds of evaporated materials were obtained; however, the absorption and refelction affect the temperature rise to a lesser extent. This would be interpreted that the temperature rise due to the kinetic and condensation energies are greater than those by radiation. The temperature rises on the substrates vary with the kinds of evaporated substances and evaporation rates; the rises are greater for C, Cr, and Si but lesser for Cu and Ge. For a constant thickness of an evaporated film, the temperature rise is reduced with greater deposition rate and shorter deposition time.
