抄録
InN, one of the less-studied III-V compound semiconductors, has pontential applications in visible-light opto-electronic devices and high-efficiency solar cells because of its direct energy gap of 1.9eV. InN polycrys talline films were synthesized by rf reactive ion plating; indium was evaporated in a nitrogen rf glow discharge. The plasma process using rf glow discharge resulted in the low-temperature synthesis of InN. Gas pressure and rf power greatly affected the preparation of the InN films, which were successfully prepared at a pressure of 13Pa and rf power of 100W. The deposition rate was 10-20nm/min. The film structure was evaluated by X-ray diffraction, RHEED and TED, and the oriented growth of the InN films was observed. InN single crystals were also observed on NaCl (100) surfaces. The chemical composition was determined by AES. The electrical, optical, chemical and electrochemical properties of the InN films prepared were also investigated. InN films showed n-type conduction and a dark red color. The InN film was found to show the electrochromic effect. The metal-nitride semiconductor has joined the group of electrochromic materials. The InN film electrode showed the particular photoelectrochemical behavior. Therefore, InN is a material of great interest.
