抄録
The effect of substrate bias voltage (+35- -200V) on the residual stress in titanium nitride films produced by RF ion plating was investigated using the X-ray diffraction sin2φ method. It was found that residual stress varied from 0 to -0.34 GPa at bias voltages ranging from +35-0V, and that increasing the negative bias voltage led to an increase in compressive stress. A compressive stress of 7.4 GPa was measured at a bias voltage of -100V. In addition the oxygen content in the films decreased with increasing the compressive stress. It seems that the origin of the compressive stress may be attributed to nitrogen atoms sitting in the interstitial site in crystal lattice and transformation in crystal structure.
