巻号一覧
37 巻, 7 号
選択された号の論文の5件中1～5を表示しています
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沼澤 潤二1986 年 37 巻 7 号 p. 328-335
発行日: 1986/07/01
公開日: 2009/10/30
ジャーナル フリーPDF形式でダウンロード (2197K) -
松田 好晴1986 年 37 巻 7 号 p. 336-340
発行日: 1986/07/01
公開日: 2009/10/30
ジャーナル フリーPDF形式でダウンロード (579K) -
森河 務, 江口 晴一郎1986 年 37 巻 7 号 p. 341-345
発行日: 1986/07/01
公開日: 2009/10/30
ジャーナル フリーThe effect of bath composition and plating conditions on the hardness and carbon content in Cr deposits from oxalic acid baths was studied, and the effect of heat treatment on the hardness of the deposits was examined.
The hardness of Cr deposits from oxalic acid baths was almost constant (micro-Vicker's hardness 1000-1200) irrespective of bath composition and plating conditions. Carbon content in the Cr deposits was 2-4 wt.%, and part of the carbon formed Cr-C alloys. After heat treatment, the hardness of the Cr deposits increased with increasing aging temperature up to 600°C. Hardness showed maximum values (about Hv 2000) at 600°C, and decreased at higher temperatures. These can be explained by changes in the phase of the Cr deposits.抄録全体を表示PDF形式でダウンロード (1187K) -
西田 典秀, 川崎 仁士, 本田 和男, 細川 智生1986 年 37 巻 7 号 p. 346-350
発行日: 1986/07/01
公開日: 2009/10/30
ジャーナル フリーThe effect of substrate bias voltage (+35- -200V) on the residual stress in titanium nitride films produced by RF ion plating was investigated using the X-ray diffraction sin2φ method. It was found that residual stress varied from 0 to -0.34 GPa at bias voltages ranging from +35-0V, and that increasing the negative bias voltage led to an increase in compressive stress. A compressive stress of 7.4 GPa was measured at a bias voltage of -100V. In addition the oxygen content in the films decreased with increasing the compressive stress. It seems that the origin of the compressive stress may be attributed to nitrogen atoms sitting in the interstitial site in crystal lattice and transformation in crystal structure.抄録全体を表示PDF形式でダウンロード (1511K) -
久保田 昇, 千田 伸, 佐藤 栄一1986 年 37 巻 7 号 p. 351-355
発行日: 1986/07/01
公開日: 2009/10/30
ジャーナル フリーThe role of magnesium sulfate used as a component of rhodium (III) sulfate plating solutions and of potassium selenate as an additive in rhodium deposition have been studied.
The deposition of rhodium from sulfate scid solution was followed by hydrogen evolution. High current density increased the grain growth of rhodium, random orientation being shown. On the addition of Mg2+ as a solution component, the deposition potential of rhodium become noble, improving strain in the deposited layer, while the addition of Se2+ made the deposition potential of rhodium less noble and resulted in finer graines with a similar tendency of orientation. It was found that the finer grains of the rhodium deposit resulted in a good surface. When both Mg2+ and Se2+ were contained, both adhesion and smoothness were even better.抄録全体を表示PDF形式でダウンロード (1288K)
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