SiとAuGeSb/Cr/NiCr/Ni層の接触抵抗
1991 年 42 巻 11 号 p. 1158-1162
詳細
1991 年 42 巻 11 号 p. 1158-1162
The contact resistance between silicon and evaporated AuGeSb/Cr/NiCr/Ni films was measured, along with the mechanical strength of thess contacts and the effect on contact resistance and mechanical strength of the presence of an AuGeSb layer between the silicon and the Cr/NiCr/Ni layer.
These films were applied to the collector electrodes of power transistors and good reliability was obtained.
