抄録
In order to improve the adhesion between Ti oxide film and Pt film, a Ti layer has often been inserted as a thin interleaving glue layer. However, through heat treatment in an oxygen atmosphere, Ti diffusion and oxidation occur through the Pt films, and they influence the temperature coefficient of resistivity (TCR) of the Pt films. SEM, TEM and SIMS observation were used for the analysis of the behavior of the Ti atoms. It was found that the most of Ti atoms in the glue layer became oxidized and diffused onto the Pt surface, but the decrease in the TCR was at most a few percent. By changing the thickness of the glue layer, we found that 5nm is the most appropriate thickness of the Ti glue layer which enhances the adhesion and suppresses the deterioration of the TCR.
