抄録
Depth profiles of Na-atoms implanted in glass-like carbon (GLC, 1.5g/cm3) were measured using of SIMS and RBS, and the atomic density of the implanted layers was determined by comparing SIMS and RBS results. Na-ion implantation was carried out with doses ranging from 1×1015 to 1×1017ions/cm2 at an energy of 150keV. SIMS results show that the depth profiles in low dose conditions are Gaussian and those in medium dose conditions are Gaussian like distributions with a hump. In a high dose condition, the profile indicates Na enrichment at the surface and broadening. RBS results are almost the same as those of SIMS, and in the high dose Na enriched layers involve an oxygen mixture. Comparing the depth profiles of SIMS with RBS, results show that the atomic density of implanted layers increases from 1.5 to 2.0g/cm3.
