抄録
In recent years, the importance of the analog memory device has been grown up for the purpose of disposal of a large quantity of information. Of the devices, an electrolytic analog memory has been studied from the view-point that it may be well used for the simulation of adaptive networks for self-organizing systems. However, most of the electrolytic analog memory devices, for example, an electrode growing type, solion, etc, have generally low sensitivity and slow build-up time. For these defects, they have not been put to practical use yet. On the other hand, a chronopotentiometric device has high sensitivity and rapid response, although it is of destructive read-out type.
In this paper, a new non-destructive read-out method for chronopotentiometric analog memory is described. This device consists of two memory electrodes and one writing electrode dipped into electrolyte. When an electric current of square wave form is applied to both memory electrodes, the voltage wave form, is varied with the electric charge stored into the memory electrode, and the average value of this voltage indicates the stored charge. In the experiment, Au is used for memory and Ag is used for writing electrode, and also HNO3+AgNO3 or KAg(CN)2 is used as the electolyte. The build-up time is about the order of 1/10 millisecond.
The principle of the memory, non-destructive read-out method, the characteristics of the device and the effects from some conditions are discussed.
