SPring-8/SACLA Research Report
Online ISSN : 2187-6886
Section A
Characterization of Chemical Bonding States of Insulator/SiC Buried Interface with Post-treatment for Improvement of the Channel Mobility in SiC Power MOSFET Interface Defect by using Hard X-ray Photoelectron Spectroscopy Analysis
Takuma Doi, Masahiro Hukuda, Osamu Nakatsuka
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Keywords: 4H-SiC, 2018B1723, BL47XU
JOURNAL OPEN ACCESS

2022 Volume 10 Issue 4 Pages 375-377

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Abstract
[in Japanese]
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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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