Abstract
In-situ monitoring of the crystal structure formation during growth of InAs and InAsSb based nanostructure arrays on patterned Si(111) substrates, was performed in a combined molecular beam epitaxy(MBE) growth and X-ray characterization experiment. An e-beam lithography defined mask etched into a SiO2 film grown on Si(111) substrates was used for the selective area growth. This method enables us to characterize the relative formation rates of the most common polytypic phases 3C (Zinc-blende) and 2H (Wurtzite) during growth, but also higher order sequences like 4H and 6H. Moreover, the effect of adding a small amount of Sb to the growth system was observed to have a direct impact on the growth mechanisms, as it induced a solid phase transition from the Wurtzite to the Zinc-blende crystal structure.
