Electronic Properties of Doped Topological Insulators (BiMn)₂Te₃ by means of Bulk Sensitive Hard X-ray Photoemission

Abstract

The influence of magnetic dopants on the electronic structures of topological insulators (TIs) is a key factor for magnetic TIs-based spintronic application. Here we measured core level and valence band hard x-ray photoemission (HAXPES) spectra for (BiMn)₂Te₃ single crystals as a function of Mn doping to investigate the modification of the bulk band structures of Bi₂Te₃ by the dopants.