主催: 公益社団法人日本表面科学会, 一般社団法人日本真空学会
Although germanene has been synthesized on some metal substrates, the Dirac-cone has not been observed yet. In this study, for the first time by using the ab initio density functional theory, the stability and electronic structure of germanene on semiconducting monolayer GaS, GaSe, GaTe and InSe are investigated. Our results suggest that Germanene can preserve its Dirac-cone-like band structure on them. On monolayer GaTe and InSe, germanene has a bandgap of around 0.14~0.16 eV at the Dirac point, while the estimated carrier mobility is up to 2.2E5 cm2/Vs.
