抄録
Silicon crystal pulling from the melt of Si–45mass%Ni alloy is performed as a model experiment of a silicon solidification refining process with silicon alloy melts. A needle-like silicon crystal is successfully grown, using a seed crystal with a ‹211› crystallographic orientation to the pulling direction, which is poly-crystalline contains a large number of twins inside. A rod-type crystal with Si–Ni eutectics engulfed inside is also obtained. Appropriate ranges of melt superheating and pulling velocity for crystal growth are estimated to be from one to five degree Celsius and from 0.018 to 0.15 mm/min, respectively. It is necessary to decrease the pulling velocity to less than 0.03 mm/min for obtaining the sufficient epitaxial growth on the seed crystal.
