抄録
An investigation has been made on the kinetics of secondary recrystallization in silicon iron containing Ti, Nb, or Al. While primary recrystallization grains were as large as 0.02mm in size, secondary recrystallization grains started to grow at interior parts of thickness. The shape of secondary recrystallization grains changed from elongated to equiaxed with the increase of annealing temperature.
Activation energies of induction period for the secondary recrystallization were obtained to be 120, 120, and 110kcal/mol for Ti-, Nb-, and Al-containing heats respectively. Precipitates of TiC were observed to be at the primary recrystallization grain boundaries by electron microscopy.
