主催: 公益社団法人 応用物理学会 多元系化合物・太陽電池研究会
会議名: 平成28年度 応用物理学会「多元系化合物・太陽電池研究会」年末講演会
開催地: 12月9日（金）：国立研究開発法人産業技術総合研究所 福島再生可能エネルギー研究所/12月10日（土）：ふくしま磐梯熱海温泉 ホテル華の湯
開催日: 2016/12/09 - 2016/12/10
p. 29-32
The relationship between energy band discontinuity and electrical properties of p-n heterointerface for tin monosulfide (SnS) based solar cells are investigated. Typical trap activation energy (Ea) value for Cd0.7Zn0.3S/SnS, and Mg0.2Zn0.8O/SnS-based solar cells were higher than the values for CdS/SnS, and Zn0.7Sn0.3O/SnS-based solar cells. These experimental result confirmed that an appropriate band structure and a high quality p-n interface are indispensable for the realization of high efficiency SnS based solar cells.
