主催: 公益社団法人 応用物理学会 多元系化合物・太陽電池研究会
会議名: 平成28年度 応用物理学会「多元系化合物・太陽電池研究会」年末講演会
開催地: 12月9日（金）：国立研究開発法人産業技術総合研究所 福島再生可能エネルギー研究所/12月10日（土）：ふくしま磐梯熱海温泉 ホテル華の湯
開催日: 2016/12/09 - 2016/12/10
p. 3-6
We proposed a compact image sensor that uses a combination of a matrix-driven Spindt-type field emitter array (FEA) and a CdTe-based photoconducting film. First of all, we investigated the effect of gamma irradiation of CdTe/CdS photodiode for radiation tolerant FEA image sensor. Taking into account the decrease in transmittance of the glass substrate, the CdS/CdTe photodiodes have sufficient tolerance to high gamma-ray exposure more than 1.7 MGy. Next, we investigated I-V characteristics under gamma-ray irradiation. The increase in current due to the gamma-ray absorption was observed. The increase rate in current at the voltage of -5 V was approximately 220 nA/cm2 per unit dose rate (1 kGy/h).
