低温プロセスによる CsPbI₃ と Cs₄PbI₆の混合次元ペロブスカイト薄膜の作製と評価

抄録

Mixed-dimensional perovskite containing Cs₄PbI₆ phases in CsPbI₃ thin film improves stability and crystallinity. In this work, low-temperature grown mixed-dimensional perovskite thin films were spin-coated and annealed at 150℃. The compositions of CsPbI₃ and Cs₄PbI₆ ratio were shifted by annealing time from 0 to 20 minutes. The carrier lifetime of perovskite thin films trends to increase with higher XRD peak intensities of Cs₄PbI₆. It suggests that the Cs₄PbI₆ phase may inactivate in CsPbI₃ thin films.