主催: 公益社団法人 応用物理学会 多元系化合物・太陽電池研究会
会議名: 令和2年 応用物理学会 多元系化合物・太陽電池研究会 年末講演会 “International Workshop on Ternary and Multinary Compounds”
開催地: オンライン開催
開催日: 2020/12/12
p. 14-17
The effect of valence band offset (VBO) on the absorber and hole-transporting layer (HTL) of CsPbI3 perovskite thin film solar cells (PVKSCs) has been analyzed by device simulations. The device parameters used in the simulations were determined by reproducing the CsPbI3-PVKSCs on Solar Cell Capacitance Simulator (SCAPS), which reported a conversion efficiency of 19%. The results suggest that the VBO should be in the range of -0.2 eV to +0.2 eV to achieve a conversion efficiency above 19%.
