三源系ファインチャネルミスト CVD法によるCu2Sn1-xGexS3薄膜の作製における塩酸の影響

抄録

To achieve low-cost deposition and achieve a higher Ge content in Cu2Sn1-xGexS3 (CTGS) thin films, a triple-source fine-channel mist CVD method was carried out. Using Cu-Sn, S, and Ge mist sources, CTGS thin films were successfully deposited on soda-lime glass substrates. Moreover, XRD analysis confirmed that crystalline CTGS thin films were attained on soda lime glass substrates.