抄録
We have produced LB films composed of [M(dmit)2]-[N(CmH2m+I)n(CH3)4-n] 1 : r ([M-(nCm)r]) complexes set in the bottom-contact-type Field-Effect transistor (FET) structure, where M = Au, Ni or Pd, m = 8, 10, 12, 14, 16, 18 or 22, n = 2, 3 or 4, and r = 1 or 2. We have measured the Ids-Vds characteristics of these LB films. The FET characteristics were observed in some cases. But the transconductivity of the devices has been found to be quite low. Moreover, an anomalous hysteric behavior of Ids-Vds characteristics has been detected for some complexes.
