Abstract
The removal efficiencies of organic impurities existing on the surface of silicon wafers by O2, H2, and N2O ECR plasma cleaning techniques were compared based on the Attenuated Total Reflection-Fourier Transform Infrared Spectroscopy (ATR-FTIR) analysis results. It was found that oxygen ECR plasma was the most efficient and hydrogen ECR plasma was the least efficient in removing organic impurities on Si wafers. In ECR oxygen plasma cleaning, the plasma exposure time to reach the detection limit of ATR-FTIR was 40s. Also the contaminants removal mechanism in O2, H2, and N2O ECR plasma cleaning have been discussed.
