抄録
The preparation of B-C-N films are attempted using trimethylborate (TMB: BO3(CH3)3) and N2 gases by a bipolar-type plasma based ion implantation method, and the influences of C7H8, Ar and H2 additional gases on the possibility of film formation are examined. It is found that no film is obtained using only TMB or TMB and N2 gases (TMB+N2). In the case of C7H8 addition to TMB+N2 system, the films composed of B, C, N and O are deposited. However, the deposition rate is significantly decreased as compared with the deposition of diamond-like carbon films using only C7H8 gas under the same deposition condition. As for Ar addition to TMB+N2 system, it is possible to deposit the films. However, FT-IR results suggest that BOx:H films are formed. On the other hand, H2 addition to TMB+N2 system makes the deposition of BCN:O,H films achievable, although the deposition rate is relatively low. In current experiments, O atoms still remain in the films even as a reduced gas of H2 uses. However, these results suggest that the film deposition using TMB+N2 system is strongly affected by the additional gases.
