抄録
SiCx films were prepared by a hybrid process of plasma-based ion implantation and deposition using hexamethyldisiloxane (HMDSO) gas including silicon. The SiCx was composed of carbon, silicon, oxygen, and hydrogen. The Si/C in film is 0.34 without negative pulsed voltage, but Si/C is increased with increasing the negative pulsed voltage to 0.56. The hydrogen of 20 - 30 at.% was included in the SiCx film. The residual stress of SiCx film was decreased with increasing ion implantation voltage from 0.2 GPa (compressive stress) to -0.2 GPa (tensile stress). The Vickers hardness of SiCx film was increased from 900 HV with -5 kV of ion implantation voltage to 1800 HV with -20 kV. A SiCx interlayer of 10 micro m in thickness was produced between the DLC film of 1 micro m in thickness and the aluminum alloy (A5052) substrate. Adhesion strength of DLC/SiCx/A5052 system was improved considerably.
