抄録
Diamond was synthesized by microwave plasma CVD and hot filament CVD. (111) textured diamond films were synthesized from CH4-H2 reaction gas system and (100) textured films were synthesized from CO-H2 reaction gas system using microwave plasma CVD, respectively. Boron doped and non-doped CVD diamond films were synthesized using hot filament CVD from CH4-H2 reaction gas system with B4C as a dopant. An electrochemical property was estimated by a cyclic voltammetry. From the SEM observation, polycrystalline diamond films were observed. For samples prepared by microwave plasma CVD method, (111) texture films and (100) textured films were obtained from different reaction gas systems. Also polycrystalline CVD diamond films were observed both boron doped and non-doped samples using hot filament CVD. From the estimation of Raman spectroscopy, peaks of diamond were obtained at 1333 cm-1 in their Raman spectra. As a result of cyclic voltammetry, the potential windows were broad. The areas of the potential window of CVD diamond films were different respectively and they were depended on growth conditions and CVD methods.
