Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Application of GISAXS to the Microstructural Evaluation of Semiconductor and Metallic Materials
H. OkudaK. KunoM. OhtakaS. OchiaiK. ItoS. SasakiM. TabuchiY. Takeda
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2008 年 33 巻 3 号 p. 529-534

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GISAXS measurement activities on semiconductor nanodots and metallic clusters/nanodots at Photon Factory and SPring8 by us are presented. Semicondutor nanodots have been one of the most well known inorganic materials examined as a model sample for GISAXS. Comparing the GISAXS results from the second generation source and those from the third one, it is concluded that the second generation would be sufficient if the conventional beam size and the coherence are required. Size, shape and spatial arrangements of only single layer of encapsulated nanodots have been assessed by the GISAXS measurements at Photon Factory. The examples shown in the present manuscript suggest that conventional SAXS beamlines at second generation source have enough potential to explore time-resolved measurements on the evolution of nanostructures at surface. Some extensions concerning GISAXS measurements are discussed.
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© 2008 The Materials Research Society of Japan
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