抄録
We studied multilayers of self-assembled Ge nanowires grown on silicon (113) surface by solid-source molecular beam epitaxy using grazing-incidence small-angle x-ray scattering combined with x-ray reflectivity. Quantitative analyses show that the embedded nanowires retained their trapezoidal shape along the [110] direction, but are significantly subjected by interdiffusion of Si at their surrounding facets even at the growth temperature of 400C. The Si interdiffusion is remarkable at the sides of the nanowires but not at the top and/or bottom of them. The diffusion lengths are 5.2 and 0.2 nm at sides and top/bottom, respectively, for the nanowire with 20.5 nm in width and 1.6 nm in height.
