抄録
We set up a laboratory level X-ray CTR measurement system using a multilayer focusing mirror and a channel-cut asymmetric Ge double-crystal for a beam squeezing and an imaging plate as a 2D detector. Even though the intensity of the laboratory X-ray is by 700 times lower than that of the synchrotron X-ray, good enough signal/background ratios were achieved by the laboratory X-ray system for a reasonable measurement time of 100 minutes. This measurement system was applied to GaN/GainN/GaN heterostructures on sapphires, which were difficult to obtain a good signal/background ratio using synchrotron X-ray CTR measurements system, and reasonable CTR data were obtained. In distributions in GaN/GainN/GaN very different from those designed were obtained.
